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Si7431DP
Vishay Siliconix
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 2.0
- 4.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = - 200 V, V GS = 0 V
V DS = - 200 V, V GS = 0 V, T J = 70 °C
V DS ?? - 10 V, V GS = - 10 V
- 20
± 100
-1
- 10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
Diode Forward Voltage a
R DS(on)
g fs
V SD
V GS = - 10 V, I D = - 3.8 A
V GS = - 6 V, I D = - 3.6 A
V DS = - 15 V, I D = - 3.8 A
I S = - 4.2 A, V GS = 0 V
0.145
0.147
17
- 0.78
0.174
0.180
- 1.2
?
S
V
Dynamic b
Total Gate Charge
Q g
88
135
Gate-Source Charge
Gate-Drain Charge
Q gs
Q gd
V DS = - 75 V, V GS = - 10 V, I D = - 5.2 A
16.5
25
nC
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
R g
t d(on)
t r
t d(off)
t f
t rr
V DD = - 75 V, R L = 15.5 ?
I D ? - 4.8 A, V GEN = - 10 V, R g = 6 ?
I F = - 2.9 A, dI/dt = 100 A/μs
1.5
3
23
49
110
66
75
4.5
40
75
180
100
120
?
ns
Notes:
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
50
V GS = 10 V thru 5 V
35
40
30
25
20
15
30
20
T C = 125 °C
10
10
25 °C
5
0
4V
0
- 55 °C
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
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